IS43TR16512S2DL-107MBLI-TR
特徵
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Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
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Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
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-Backward compatible to 1.5V
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High speed data transfer rates with system
frequency up to 933 MHz
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8 internal banks for concurrent operation
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8n-Bit pre-fetch architecture
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Programmable CAS Latency
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Programmable Additive Latency: 0, CL-1,CL-2
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Programmable CAS WRITE latency (CWL) based
on tCK
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Programmable Burst Length: 4 and 8
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Programmable Burst Sequence: Sequential or
Interleave
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BL switch on the fly
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Auto Self Refresh(ASR)
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Self Refresh Temperature(SRT)
OPTIONS
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Configuration:
512Mx16(dual die)
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Package:
96-ball BGA (9mm x 13mm)
ADDRESS TABLE
SPEED BIN
Speed Option
125K
107M
Units
JEDEC Speed Grade
DDR3-1600K
DDR3-1866M
CL-nRCD-nRP
11-11-11
13-13-13
tCK
tRCD,tRP(min)
ns
Note:Faster speed options are backward compatible to slower speed options.
13.75
13.91
AUGUST 2020
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Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
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Partial Array Self Refresh
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Asynchronous RESET pin
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OCD (Off-Chip Driver Impedance Adjustment)
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Dynamic ODT (On-Die Termination)
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Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
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Write Leveling
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Up to 200 MHz in DLL off mode