IS46DR86400B-3DBLA2

容量	512M
規格	64Mx8
腳位/封裝	BGA(60)
電壓	1.8V
刷新	8K
速度	3 = 333MHz
字數	64M
型號別	IBIS
焊接	SnAgCu
狀態	OBS
類型	DDR2
總線寬度	8 = x8
温規	Automotive Grade (-40C to +105°C)
CL（CAS延遲）	D = 5
代/版本	B
產品系列	46 = DDR/DDR2/DDR3/DDR4 Automotive grade
温度等级	A2 = Automotive Grade (-40°C to +105°C)
焊料類型	L = SnAgCu
字數	6400 = 64M
Generation	B = B
工作電壓範圍	DR = 1.8V DDR2
腳位/封裝	B = BGA

數據表

索取報價

IS46DR86400B-3DBLA2 特徵

Clock frequency up to 400MHz
Posted CAS
Programmable CAS Latency: 3, 4, 5 and 6
Programmable Additive Latency: 0, 1, 2, 3, 4 and 5
Write Latency = Read Latency-1
Programmable Burst Sequence: Sequential or Interleave
Programmable Burst Length: 4 and 8
Automatic and Controlled Precharge Command
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 7.8 µs (8192 cycles/64 ms)
OCD (Off-Chip Driver Impedance Adjustment)
ODT (On-Die Termination)
Weak Strength Data-Output Driver Option
Bidirectional differential Data Strobe (Single- ended data-strobe is an optional feature) AUGUST 2012
On-Chip DLL aligns DQ and DQs transitions with CK transitions
Differential clock inputs CK and CK#
VDD and VDDQ = 1.8V ± 0.1V
PASR (Partial Array Self Refresh)
SSTL_18 interface
Read Data Strobe supported (x8 only)
tRAS lockout supported Internal four bank operations with single pulsed RAS
Operating temperature: Commercial (TA = 0°C to +70°C ; TC = 0°C to +85°C) Industrial (TA = -40°C to +85°C; TC = -40°C to +95°C) Automotive, A1 (TA = -40°C to +85°C; TC = -40°C to +95°C) Automotive, A2 (TA = -40°C to +105°C; TC = -40°C to +105°C) OPTIONS
Configuration: − 64Mx8 (16M x 8 x 4 banks) − 32Mx16 (8M x 16 x 4 banks)

概觀

Input clocks Clock enable Chip Select Command control inputs Address Bank Address I/O Upper Byte Data Strobe Lower Byte Data Strobe Input data mask Supply voltage Ground DQ power supply DQ ground Reference voltage DLL power supply DLL ground On Die Termination Enable No connect.