IS66WV1M16EBLL-70BLI

容量 16M
規格 1Mx16
電壓 1.7-1.95V
狀態 Prod
腳位數 mBGA(48)
速度Ns 70
評論上一篇 Standard Asynch
Item 66 = Pseudo SRAM/HyperRAM™
ROHS版 L = true
產品類別 WV = Standard Asynch PSRAM
溫度範圍 I = Industrial (-40°C to 85°C)
電壓 - 電源 BLL = 3V
密度配置 1M16 = 16Mb /1M x16
包裝代碼 B = 48 TFBGA 6x8

IS66WV1M16EBLL-70BLI 特徵

  • High-Speed access time :
  • - 70ns ( IS66WV1M16EALL ) - 60ns (IS66/67WV1M16EBLL )
  • CMOS Lower Power Operation
  • Single Power Supply
    • VDD =1.7V~1.95V( IS66WV1M16EALL )
    • VDD =2.5V~3.6V (IS66/67WV1M16EBLL ) DESCRIPTION The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are high-speed,16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input
  • Three State Outputs levels.
  • Data Control for Upper and Lower bytes

概觀

The ISSI IS66WV1M16EALL and IS66/67WV1M16EBLL are.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS66WV1M16EBLL-70BLI-TR IS67WV1M16EBLL-55BLA2-TR
IS66WV1M16EBLL-55BLI 280 IS67WV1M16EBLL-70BLA1
IS66WV1M16EBLL-55BLI-TR IS67WV1M16EBLL-70BLA1-TR
IS67WV1M16EBLL-55BLA1 IS67WV1M16EBLL-70BLA2
IS67WV1M16EBLL-55BLA1-TR IS67WV1M16EBLL-70BLA2-TR
IS67WV1M16EBLL-55BLA2