| 規格 | 1Mx16 |
|---|---|
| 腳位/封裝 | mBGA(48) |
| 電壓 | 2.5V-3.6V |
| 焊接 | Lead-free (RoHS Compliant) |
| 狀態 | Prod |
| 評注 | Standard Asynch |
| 硅片版本 | D |
| 外包裝 | Tape on Reel |
| 速度（ns） | 70 |
| 温規 | Industrial Grade (-40C to +85°C) |
| 電壓範圍 | 2.2V (2.4V/2.5V) to 3.6V |
| 產品系列 | Pseudo SRAM |
| 包裝代碼 | B = 48 TFBGA 6x8 |
| Item | 66 = Pseudo SRAM/HyperRAM™ |
| ROHS版 | L = true |
| 產品類別 | WV = Standard Asynch PSRAM |
| Revision | D = D |
| 溫度範圍 | I = Industrial (-40°C to 85°C) |
| 電壓 - 電源 | BLL = 3V |
| 密度配置 | 1M16 = 16Mb /1M x16 |
The ISSI IS66WV1M16DALL/DBLL is a high-speed, 16M bit static RAMs organized as 1Mb words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS66WV1M16DALL/DBLL is packaged in the JEDEC standard 48-ball mini BGA (6mm x 8mm). The device is also available for die sales.