容量 8M
規格 512Kx16
電壓 1.65-3.6V
速度(ns) 45
腳位/封裝 B = BGA
狀態 Prod
型號別 IBIS
評注 IS62WV51216ALL/BLL
產品系列 65 = 車用低功耗
硅片版本 E
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 A3 = 車規 (-40C to +125°C)
外包裝 卷轴包

IS65WV51216EBLL-45BLA3-TR 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • 36 mW (typical) operating
  • TTL compatible interface levels
  • Single power supply
    • 1.65V—2.2V VDD (62/65WV51216EALL)
    • 2.2V--3.6V VDD (62/65WV51216EBLL)
  • Data control for upper and lower bytes

概觀

The high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When (deselected) or when.