1. 矽成
  2. 靜態隨機存取存儲器
  3. 異步 SRAM
  4. High Speed Low Power
  5. 2.4~3.6
  6. BGA
  7. IS64WV102416EDBLL-12BLA3

  IS64WV102416EDBLL-12BLA3

數據表
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規格 1Mx16
腳位/封裝 BGA
電壓 2.4~3.6
焊接 Lead-free (RoHS Compliant)
狀態 S=Q2/16
評注 ECC based SRAM
硅片版本 ED
速度（ns） 10
温規 Automotive Grade (-40C to +125°C)
電壓範圍 2.2V (2.4V/2.5V) to 3.6V
產品系列 Automotive High Speed
數據表
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IS64WV102416EDBLL-12BLA3 特徵

  • High-speed access time: 10ns, 12ns
  • Single power supply
    • 1.65V-2.2V VDD(IS61/64WV102416EDALL)
    • 2.4V-3.6V VDD (IS61/64WV102416EDBLL)
  • Error Detection and Correction with optional ERR1/ERR2 output pin:
  • - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection
  • Three state outputs Industrial and Automotive temperature support

概觀

The ISSI IS61/64WV102416EDALL/EDBLL are high-speed, low power, 16M bit static RAMs organized as 1M words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.