1. 矽成
  2. 靜態隨機存取存儲器
  3. 異步 SRAM
  4. High Speed Low Power
  5. 1.65-3.6V
  6. 1M 128Kx8
  7. TSOP2(32), BGA(48), sTSOP1(32), SOJ(32.3)
  8. IS63WV1288DBLL-10JLI-TR

  IS63WV1288DBLL-10JLI-TR

數據表
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容量 1M
規格 128Kx8
電壓 1.65-3.6V
狀態 Prod
腳位數 TSOP2(32), BGA(48), sTSOP1(32), SOJ(32.3)
速度Ns 8, 10, 12, 20
評論上一篇 IS63LV1024/L, IS63WV1024BLL
產品系列 63 = High Speed
Bit Org 8 = x8
Operating Voltage WV = Wide Voltage Range
包裝代碼 J = 300-mil SOJ
電壓範圍 BLL = 2.5V to 3.6V
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = Lead-free (ROHS Compliant)
字數 128 = 128K
Revision D = D
速度 10 = 10NS
外包裝 Tape on Reel
數據表
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IS63WV1288DBLL-10JLI-TR 特徵

  • High-speed access time: 8, 10, 12, 20 ns
  • Low Active Power: 135 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS63/64WV1288DALS/DBLS)
  • High-speed access time: 25, 35 ns
  • Low Active Power: 55 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby
  • Single power supply — Vdd 1.65V to 2.2V (IS63WV1288DAxx) — Vdd 2.4V to 3.6V (IS63/64WV1288DBxx)
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs

概觀

The ISSI IS63/64WV1288Dxxx is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. The IS63/64WV1288DBLL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS63WV1288DBLL-10JLI 10,000 IS63WV1288DBLL-8HLI
IS63WV1288DBLL-10HLI 10,000 IS63WV1288DBLL-8HLI-TR
IS63WV1288DBLL-10HLI-TR IS63WV1288DBLL-8JLI
IS63WV1288DBLL-10KLI 10,000 IS63WV1288DBLL-8JLI-TR
IS63WV1288DBLL-10KLI-TR IS63WV1288DBLL-8TLI
IS63WV1288DBLL-10TLI 10,000 IS63WV1288DBLL-8TLI-TR
IS63WV1288DBLL-10TLI-TR 5,000