規格 256Kx8
電壓 1.65-3.6V
速度(ns) 70
腳位/封裝 T = TSOP
狀態 Prod
型號別 IBIS
評注 IS62WV2568DALL/DBLL
產品系列 62 = 低電量
電壓範圍 ALL = 1.65V to 2.2V
焊接 L = 無鉛
温規 I = 工業級 (-40C to +85°C)

IS62WV2568ALL-70TLI 特徵

  • High-speed access time: 45ns, 55ns, 70ns
  • CMOS low power operation
    • 36 mW (typical) operating
    • 9 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single power supply
    • 1.65V--2.2V Vcc (62WV2568ALL)
    • 2.5V--3.6V Vcc (62WV2568BLL)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Industrial temperature available

概觀

The ISSI IS62WV2568ALL / IS62WV2568BLL are high- speed, 2M bit static RAMs organized as 256K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) , the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62WV2568ALL and IS62WV2568BLL are packaged in the JEDEC standard 32-pin TSOP (TYPE I), sTSOP (TYPE I), and 36-pin mini BGA.