| 規格 | 256Kx16 |
|---|---|
| 腳位/封裝 | BGA |
| 電壓 | 1.65-3.6V |
| 型號別 | IBIS |
| 焊接 | Lead-free (RoHS Compliant) |
| 狀態 | Prod |
| 硅片版本 | D |
| 外包裝 | Tape on Reel |
| 速度（ns） | 55 |
| 温規 | Industrial Grade (-40C to +85°C) |
| 電壓範圍 | 1.65V to 2.2V |
| 產品系列 | 62 = Low Power |
| Bit Org | 16 = x16 |
| Operating Voltage | WV = Wide Voltage Range |
| 包裝代碼 | B = BGA |
| 電壓範圍 | ALL = 1.65V to 2.2V |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = Lead-free (ROHS Compliant) |
| 字數 | 256 = 256K |
| Revision | D = D |
| 速度 | 55 = 55NS |
The ISSI IS62WV25616DALL and IS62/65WV25616DBLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselcted) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV25616DALL and IS62/65WV25616DBLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin mini BGA (6mmx8mm).