規格 1Mx8
電壓 1.65-3.6V
速度(ns) 55
腳位/封裝 B = BGA
狀態 S=NOW
評注 ECC based SRAM
產品系列 62 = 低電量
硅片版本 EF
電壓範圍 ALL = 1.65V to 2.2V
焊接 [空白] = SnPb
温規 I = 工業級 (-40C to +85°C)
外包裝 卷轴包

IS62WV10248EFALL-55BI-TR 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 36mA (max.)
    • CMOS standby Current: 5.8uA (typ.)
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (IS62/65WV10248EFALL)
    • 2.2V-3.6V VDD (IS62/65WV10248EFBLL)
  • Optional ERR1/ERR2 pin: ERR1: indicates 1-bit error detection and correction. ERR2: indicates 2-bit error detection
  • Three state outputs Industrial and Automotive temperature support

概觀

The ISSI IS62/65WV10248EFALL/BLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability. This highly reliable process coupled with innovative circuit design techniques including ECC, yields high-performance and low power consumption devices.