規格 1Mx8
電壓 1.65-3.6V
速度(ns) 45
腳位/封裝 B = BGA
狀態 Prod
型號別 IBIS
評注 IS62WV10248DALL/BLL, IS62WV10248BLL
產品系列 62 = 低電量
硅片版本 E
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 [空白] = SnPb
温規 I = 工業級 (-40C to +85°C)

IS62WV10248EBLL-45BI 特徵

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • 36 mW (typical) operating
  • TTL compatible interface levels
  • Single power supply
    • 1.65V-2.2V VDD (62/65WV10248EALL)
    • 2.2V-3.6V VDD (62/65WV10248EBLL)
  • Automotive temperature (-40oC to +125oC)

概觀

The ISSI IS62WV10248EALL/ IS62WV10248EBLL are high-speed, 8M bit static RAMs organized as 1M words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When is HIGH (deselected) or when CS2 is low (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable ( the memory. The IS62WV10248EALL and IS62WV10248EBLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II).