容量 1M
規格 64Kx16
電壓 2.4-3.6V
速度(ns) 10
腳位/封裝 T = TSOP
狀態 Prod
型號別 IBIS
評注 IS61LV6416/L, IS61WV6416BLL
產品系列 61 = 高速
硅片版本 D
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 [空白] = SnPb
温規 I = 工業級 (-40C to +85°C)

IS61WV6416DBLL-10TI 特徵

  • High-speed access time: 8, 10, 12, 20 ns
  • Low Active Power: 135 mW (typical)
  • High-speed access time: 25, 35 ns
  • Low Active Power: 55 mW (typical)
  • Low Standby Power: 12 µW (typical) CMOS standby
  • Single power supply — Vdd 1.65V to 2.2V (IS61WV6416DAxx) — Vdd 2.4V to 3.6V (IS61/64WV6416DBxx)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support

概觀

The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.