規格 512Kx8
電壓 2.4-3.6V
速度(ns) 10
腳位/封裝 B = BGA
狀態 Prod
型號別 IBIS
評注 ECC Based SRAM
產品系列 61 = 高速
硅片版本 ED
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 [空白] = SnPb
温規 I = 工業級 (-40C to +85°C)

IS61WV5128EDBLL-10BI 特徵

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Industrial and Automotive temperature support
  • Lead-free available

概觀

The ISSI IS61/64WV5128EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 524,288 words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with inno- vative circuit design techniques, yields high-performance and low power consumption devices.