| 容量 | 8M |
|---|---|
| 規格 | 512Kx16 |
| 電壓 | 1.65-3.6V |
| 狀態 | Prod |
| 腳位數 | TSOP2(44), BGA(48) |
| 速度Ns | 8, 10, 20 |
| 評論上一篇 | ECC Based SRAM |
The ISSI IS61WV51216EDALL and IS61/64WV51216EDBLL are high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabri- cated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.