1. 矽成
  2. 靜態隨機存取存儲器
  3. 異步 SRAM
  4. High Speed Low Power
  5. 2.4-3.6V
  6. 4M 256Kx16
  7. TSOP2(44), BGA(48)
  8. IS61WV25616EDBLL-10BI-TR

  IS61WV25616EDBLL-10BI-TR

數據表
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容量 4M
規格 256Kx16
電壓 2.4-3.6V
狀態 Prod
腳位數 TSOP2(44), BGA(48)
速度Ns 8, 10
評論上一篇 ECC Based SRAM
數據表
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IS61WV25616EDBLL-10BI-TR 特徵

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) CMOS standby
  • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available

概觀

The ISSI IS61/64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- performance and low power consumption devices.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS61WV25616EDBLL-10BI IS61WV25616EDBLL-8BI
IS61WV25616EDBLL IS61WV25616EDBLL-8BI-TR
IS61WV25616EDBLL-10BLI 2,400 IS61WV25616EDBLL-8BLI 1,440
IS61WV25616EDBLL-10BLI-TR 5,000 IS61WV25616EDBLL-8BLI-TR 5,052
IS61WV25616EDBLL-10TI IS61WV25616EDBLL-8TI
IS61WV25616EDBLL-10TI-TR IS61WV25616EDBLL-8TI-TR
IS61WV25616EDBLL-10TLI 405 IS61WV25616EDBLL-8TLI 135
IS61WV25616EDBLL-10TLI-TR 1,000 IS61WV25616EDBLL-8TLI-TR 1,000