規格 1Mx8
電壓 1.65-3.6V
速度(ns) 8
腳位/封裝 B = BGA
狀態 S=NOW
評注 ECC Based SRAM
產品系列 61 = 高速
硅片版本 EE
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 [空白] = SnPb
温規 I = 工業級 (-40C to +85°C)

IS61WV10248EEBLL-8BI 特徵

  • High-speed access time: 8ns, 10ns, 20ns
  • Single power supply
    • 1.65V-2.2V VDD (IS61WV10248EEALL)
    • 2.4V-3.6V VDD (IS61/64WV10248EEBLL)
  • Error Detection and Correction with optional ERR1/ERR2 output pin:
  • - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates 2-bit error detection
  • Package Available:
  • - - - 44-pin TSOP (Type II) 48-ball mini BGA (6mm x 8mm) 54 pin TSOP (Type II)
  • Three state outputs

概觀

The ISSI IS61/64WV10248EEALL/BLL are high-speed, low power, 8M bit static RAMs organized as 1024K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function to improve reliability.