規格 1Mx8
電壓 2.4-3.6V
速度(ns) 10
腳位/封裝 T = TSOP
狀態 Prod
評注 ECC Based SRAM
產品系列 61 = 高速
硅片版本 ED
電壓範圍 BLL = 2.2V (2.4V/2.5V) to 3.6V
焊接 L = 無鉛
温規 I = 工業級 (-40C to +85°C)

IS61WV10248EDBLL-10TLI 特徵

  • High-speed access times: 8, 10, 20 ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Packages available:
    • 48-ball miniBGA (6mm x 8mm)
    • 44-pin TSOP (Type II)
  • Industrial and Automotive Temperature Support

概觀

The ISSI IS61/64WV10248EDBLL are very high-speed, low power, 1M-word by 8-bit CMOS static RAM. The IS61/64WV10248EDBLL are fabricated using ISSI's high-performance CMOS technology. This highly reli- able process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.