1. 矽成
  2. 靜態隨機存取存儲器
  3. 同步 SRAM
  4. Pipeline
  5. 2.5V
  6. BGA
  7. IS61VPD51236A-200B3

  IS61VPD51236A-200B3

數據表
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規格 1Mx18
腳位/封裝 BGA
tKQ 2.6, 3.1
電壓 2.5V
VccQ 2.5V
型號別 IBIS
焊接 SnPb
狀態 Prod
評注 P/DCD
速度（MHz） 200
温規 Commercial Grade (0C to +70°C)
產品系列 High Speed
數據表
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IS61VPD51236A-200B3 特徵

  • Internal self-timed write cycle
  • Individual Byte Write Control and Global Write
  • Clock controlled, registered address, data and control
  • Burst sequence control using MODE input
  • Three chip enable option for simple depth ex- pansion and address pipelining
  • Common data inputs and data outputs
  • Auto Power-down during deselect
  • Double cycle deselect
  • Snooze MODE for reduced-power standby
  • JTAG Boundary Scan for PBGA package
  • Power Supply LPD: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5% VPD: Vdd 2.5V + 5%, Vddq 2.5V + 5%
  • JEDEC 100-Pin TQFP and 165-pin PBGA package

概觀

The ISSI IS61LPD/VPD51236A and IS61LPD/VP- D102418A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD51236A is organized as 524,288 words by 36 bits, and the IS61LPD/VPD102418A is organized as 1,048,576 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high- drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.