1. 矽成
  2. 靜態隨機存取存儲器
  3. 同步 SRAM
  4. Pipeline
  5. 3.3V
  6. 4M 128Kx32
  7. TQFP
  8. IS61LPS12836A-200TQ

  IS61LPS12836A-200TQ

數據表
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容量 4M
規格 128Kx32
腳位/封裝 TQFP
tKQ 2.6, 3.1
電壓 3.3V
VccQ 2.5/3.3V
焊接 SnPb
狀態 Prod
評注 P/SCD
速度（MHz） 200
温規 Commercial Grade (0C to +70°C)
產品系列 High Speed
數據表
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IS61LPS12836A-200TQ 特徵

  • Internal self-timed write cycle
  • Individual Byte Write Control and Global Write
  • Clock controlled, registered address, data and control
  • Burst sequence control using MODE input
  • Three chip enable option for simple depth ex- pansion and address pipelining
  • Common data inputs and data outputs
  • Auto Power-down during deselect
  • Single cycle deselect
  • Snooze MODE for reduced-power standby
  • Power Supply LPS: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5% VPS: Vdd 2.5V + 5%, Vddq 2.5V + 5%
  • JEDEC 100-Pin QFP, 119-ball and 165-ball BGA packages
  • Automotive temperature available

概觀

The ISSI IS61(64)LPS12832A, IS61(64)LPS/VP- S12836A and IS61(64)LPS/VPS25618A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LPS12832A is organized as 131,072 words by 32 bits. The IS61(64)LPS/ VPS12836A is organized as 131,072 words by 36 bits. The IS61(64)LPS/VPS25618A is organized as 262,144 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge-triggered single clock input.