| 容量 | 18M |
|---|---|
| 規格 | 512Kx36 |
| 電壓 | 3.3V |
| VccQ | 2.5/3.3V |
| 狀態 | Prod |
| tKQ(ns) | 2.6, 3.1 |
| 腳位數 | QFP(100), BGA(165) |
| 速度Mhz | 250, 200 |
| 評論上一版本 | P/DCD, IS61LPD51236A |
The 18Mb product family features high-speed, low- power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61LPD/VPD/VVPD51236B are organized as 524,288 words by 36bits. The IS61LPD/VPD/VVPD102418B are organized as 1,048,576 words by 18bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a positive-edge- triggered single clock input. Write cycles are internally self-timed and are initiated by the rising edge of the clock input. Write cycles can be one to four bytes wide as controlled by the write control inputs. Separate byte enables allow individual bytes to be written. The byte write operation is performed by using the byte write enable (/BWE) input combined with one or more individual byte write signals (/BWx). In addition, Global Write (/GW) is available for writing all bytes at one time, regardless of the byte write controls. Bursts can be initiated with either /ADSP (Address Status Processor) or /ADSC (Address Status Cache Controller) input pins. Subsequent burst addresses can be generated internally and controlled by the /ADV (burst address advance) input pin. The mode pin is used to select the burst sequence order. Linear burst is achieved when this pin is tied LOW. Interleave burst is achieved when this pin is tied HIGH or left floating.