IS64WV25616BLS-TR

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容量	4M
規格	256Kx16
電壓	2.4-3.6V
狀態	Prod
腳位數	TSOP2(44), BGA(48)
速度Ns	10
評論上一篇	IS64LV25616AL

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IS64WV25616BLS-TR 特徵

High-speed access time: 8, 10, 20 ns
Low Active Power: 85 mW (typical)
Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS)
High-speed access time: 25, 35, 45 ns
Low Active Power: 35 mW (typical)
Low Standby Power: 0.6 mW (typical) CMOS standby
Single power supply — Vdd 1.65V to 2.2V (IS61WV25616Axx) — Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)
Fully static operation: no clock or refresh required
Three state outputs
Data control for upper and lower bytes

概觀

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

IS64WV25616BLS-TR

IS64WV25616BLS-TR 特徵

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