1. 矽成
  2. 靜態隨機存取存儲器
  3. Serial SRAM & Low Pin Count SRAM
  4. Automotive Asynchronous SRAM
  5. 2.4-3.6V
  6. 16M 1Mx16
  7. BGA
  8. IS61WV102416BLL-10MI

  IS61WV102416BLL-10MI

數據表
索取報價
容量 16M
規格 1Mx16
腳位/封裝 BGA
電壓 2.4-3.6V
焊接 SnPb
狀態 Prod
速度（ns） 10
温規 Industrial Grade (-40C to +85°C)
電壓範圍 2.2V (2.4V/2.5V) to 3.6V
產品系列 61 = High Speed
Bit Org 16 = x16
Operating Voltage WV = Wide Voltage Range
包裝代碼 M = BGA
電壓範圍 BLL = 2.5V to 3.6V
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 blank = SnPb
字數 1024 = 1024K
速度 10 = 10NS
數據表
索取報價

IS61WV102416BLL-10MI 特徵

  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE op- tions
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Single power supply Vdd 1.65V to 2.2V (IS61WV102416ALL) speed = 20ns for Vdd 1.65V to 2.2V Vdd 2.4V to 3.6V (IS61/64WV102416BLL) speed = 10ns for Vdd 2.4V to 3.6V speed = 8ns for Vdd 3.3V + 5%
  • Packages available:
    • 48-ball miniBGA (9mm x 11mm)
    • 48-pin TSOP (Type I)
  • Industrial and Automotive Temperature Support
  • Lead-free available

概觀

The ISSI IS61WV102416ALL/BLL and IS64WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSI's high-perfor- mance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.