1. 矽成
  2. 動態記憶體
  3. 同步動態隨機存取記憶體
  4. 3.3V Automotive
  5. 256M 32Mx8
  6. TSOP2(54), BGA(54)
  7. IS45S83200G-7CTLA1

  IS45S83200G-7CTLA1

數據表
索取報價
容量 256M
規格 32Mx8
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 NR
評注
腳位數 TSOP2(54), BGA(54)
產品系列 45 = SDR Automotive grade
温度等级 A1 = Automotive Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
字數 3200 = 32M
CL（CAS延遲） C = 4
Generation G = G
工作電壓範圍 S = 3.3V SDR
總線寬度 8 = x8
腳位/封裝 T = TSOP
數據表
索取報價

IS45S83200G-7CTLA1 特徵

  • Clock frequency: 200,166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S83200G-7CTLA1-TR IS45S83200G-7CTLA2
IS45S83200G IS45S83200G-7CTLA2-TR
IS45S83200G-6TLA1 IS45S83200G-7TLA1
IS45S83200G-6TLA1-TR IS45S83200G-7TLA1-TR
IS45S83200G-7BLA1 20,480 17,400 IS45S83200G-7TLA2
IS45S83200G-7BLA1-TR IS45S83200G-7TLA2-TR