IS45S32400J-7BA1

規格	4Mx32
腳位/封裝	BGA
電壓	3.3V
刷新	4K
速度	7 = 143MHz
字數	4M
焊接	SnPb
狀態	S=Q3/17
類型	SDR
總線寬度	32 = x32
温規	Automotive Grade (-40C to +85°C)
代/版本	J
產品系列	45 = SDR Automotive grade
温度等级	A1 = Automotive Grade (-40°C to +85°C)
焊料類型	blank = Sn/Pb
字數	400 = 4M
Generation	J = J
工作電壓範圍	S = 3.3V SDR
腳位/封裝	B = BGA

數據表

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IS45S32400J-7BA1 特徵

Clock frequency: 166, 143, 133 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single Power supply: 3.3V + 0.3V
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command OPTIONS
Package: 86-pin TSOP-II 90-ball TF-BGA

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.