IS45S32400E-6BLA1

容量	128M
規格	4Mx32
電壓	3.3V
類型	SDR
刷新	4K
速度	6 = 166MHz
狀態	Contact ISSI
評注
腳位數	TSOP2(86), BGA(90)
產品系列	45 = SDR Automotive grade
温度等级	A1 = Automotive Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	400 = 4M
Generation	E = E
工作電壓範圍	S = 3.3V SDR
總線寬度	32 = x32
腳位/封裝	B = BGA

數據表

索取報價

IS45S32400E-6BLA1 特徵

Clock frequency: 166, 143, 133 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single Power supply: 3.3V + 0.3V
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command OPTIONS
Package: 86-pin TSOP-II 90-ball TF-BGA

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.

IC 編號	可用數量	IC 編號	庫存數量	可用數量
IS45S32400E-6BLA1-TR	7,500	IS45S32400E-7BLA1	75	6,076
IS45S32400E	5	IS45S32400E-7BLA1-TR		6,583
IS45S32400E-6BLA2	77	IS45S32400E-7BLA2	32	6,994
IS45S32400E-6BLA2-TR		IS45S32400E-7BLA2-TR		6,585
IS45S32400E-6TLA1	6,494	IS45S32400E-7TLA1	163	6,469
IS45S32400E-6TLA1-TR	6,013	IS45S32400E-7TLA1-TR		6,886
IS45S32400E-7BA1	240	IS45S32400E-7TLA2		6,262
IS45S32400E-7BA1-TR	2,500	IS45S32400E-7TLA2-TR		6,996

IC 編號

庫存數量

可用數量

IC 編號

庫存數量

可用數量

7,500

6,076