| 容量 | 64M |
|---|---|
| 規格 | 2Mx32 |
| 電壓 | 3.3V |
| 類型 | SDR |
| 刷新 | 4K |
| 速度 | 7 = 143MHz |
| 狀態 | Contact ISSI |
| 評注 | |
| 腳位數 | TSOP2(86), BGA(90) |
| 產品系列 | 45 = SDR Automotive grade |
| 温度等级 | A1 = Automotive Grade (-40°C to +85°C) |
| 焊料類型 | L = SnAgCu |
| 字數 | 200 = 2M |
| Generation | E = E |
| 工作電壓範圍 | S = 3.3V SDR |
| 總線寬度 | 32 = x32 |
| 腳位/封裝 | B = BGA |
ISSI's 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high- speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
| IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
|---|---|---|---|---|---|
| IS45S32200E-7BLA1-TR | 6,289 | IS45S32200E-75ETLA1-TR | 1,500 | ||
| IS45S32200E | IS45S32200E-7BA1 | ||||
| IS45S32200E-6BLA1 | 6,971 | IS45S32200E-7BA1-TR | |||
| IS45S32200E-6BLA1-TR | 7,500 | IS45S32200E-7BLA2 | 6,978 | ||
| IS45S32200E-6TLA1 | 6,852 | IS45S32200E-7BLA2-TR | 6,905 | ||
| IS45S32200E-6TLA1-TR | 6,553 | IS45S32200E-7TLA1 | 127 | 127 | |
| IS45S32200E-75EBLA1 | 137 | IS45S32200E-7TLA1-TR | 6,057 | ||
| IS45S32200E-75EBLA1-TR | IS45S32200E-7TLA2 | 5,000 | |||
| IS45S32200E-75ETLA1 | 48 | IS45S32200E-7TLA2-TR | 6,425 |