IS45S32160F-7BLA2

容量 512M
規格 16Mx32
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 Prod
評注
腳位數 TSOP(86), BGA(90)
温度等级 A2 = Automotive Grade (-40°C to +105°C)
焊料類型 L = SnAgCu
Generation F = F
字數 160 = 16M
工作電壓範圍 S = 3.3V SDR
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 45 = SDR Automotive grade

IS45S32160F-7BLA2 特徵

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45S32160F - Vdd/Vddq = 3.3V IS42/45R32160F - Vdd/Vddq = 2.5
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Packages: 90-ball TF-BGA, 86-pin TSOP-ll

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S32160F-7BLA2-TR IS45S32160F-7BLA1-TR
IS45S32160F-6BLA1 IS45S32160F-7TLA1
IS45S32160F-6BLA1-TR IS45S32160F-7TLA1-TR
IS45S32160F-6TLA1 IS45S32160F-7TLA2 648
IS45S32160F-6TLA1-TR IS45S32160F-7TLA2-TR
IS45S32160F-7BLA1