| 容量 | 512M |
|---|---|
| 規格 | 16Mx32 |
| 電壓 | 3.3V |
| 類型 | SDR |
| 刷新 | 8K |
| 速度 | 7 = 143MHz |
| 狀態 | Prod |
| 評注 | |
| 腳位數 | TSOP(86), BGA(90) |
| 產品系列 | 45 = SDR Automotive grade |
| 温度等级 | A1 = Automotive Grade (-40°C to +85°C) |
| 焊料類型 | L = SnAgCu |
| 字數 | 160 = 16M |
| Generation | F = F |
| 工作電壓範圍 | S = 3.3V SDR |
| 總線寬度 | 32 = x32 |
| 腳位/封裝 | B = BGA |
ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.