IS45S16800J-6CTLA1-TR

規格	8Mx16
腳位/封裝	TSOP
電壓	3.3V
刷新	4K
速度	6 = 166MHz
字數	8M
焊接	100% matte Sn
狀態	S=NOW
外包裝	Tape on Reel
類型	SDR
總線寬度	16 = x16
温規	Automotive Grade (-40C to +85°C)
CL（CAS延遲）	C = 4
代/版本	J
產品系列	45 = SDR Automotive grade
温度等级	A1 = Automotive Grade (-40°C to +85°C)
焊料類型	L = 100% matte Sn
字數	800 = 8M
Generation	J = J
工作電壓範圍	S = 3.3V SDR
腳位/封裝	T = TSOP

數據表

索取報價

IS45S16800J-6CTLA1-TR 特徵

Clock frequency: 166, 143 MHz
Internal bank for hiding row access/precharge
Power supply IS42/45S81600J IS42/45S16800J Vdd Vddq 3.3V 3.3V 3.3V 3.3V
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
4096 refresh cycles every 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.