IS45S16400F-5BLA1

容量	64M
規格	4Mx16
電壓	3.3V
類型	SDR
刷新	4K
速度	5 = 200MHz
狀態	Contact ISSI
評注
腳位數	TSOP2(54), BGA(54)
產品系列	45 = SDR Automotive grade
温度等级	A1 = Automotive Grade (-40°C to +85°C)
焊料類型	L = SnAgCu
字數	400 = 4M
Generation	F = F
工作電壓範圍	S = 3.3V SDR
總線寬度	16 = x16
腳位/封裝	B = BGA

數據表

索取報價

IS45S16400F-5BLA1 特徵

Clock frequency: 200, 166, 143, 133 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single 3.3V power supply
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Self refresh modes
Auto refresh (CBR)
4096 refresh cycles every 64 ms (Com, Ind, A1 grade) or 16ms (A2 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command OPTIONS
Package: 54-pin TSOP II 54-ball FBGA (8mm x 8mm)

概觀

ISSI's 64Mb Synchronous DRAM is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

IC 編號	庫存數量	可用數量	IC 編號	可用數量
IS45S16400F-5BLA1-TR		1,500	IS45S16400F-7BLA2	6,596
IS45S16400F			IS45S16400F-7BLA2-TR	6,922
IS45S16400F-5TLA1		108	IS45S16400F-7CTLA1	6,963
IS45S16400F-5TLA1-TR		1,500	IS45S16400F-7CTLA1-TR
IS45S16400F-6BLA1		6,561	IS45S16400F-7CTLA2
IS45S16400F-6BLA1-TR		7,500	IS45S16400F-7CTLA2-TR
IS45S16400F-6CTLA1		10,793	IS45S16400F-7CTNA1	8,002
IS45S16400F-6CTLA1-TR			IS45S16400F-7CTNA1-TR	1,500
IS45S16400F-6CTNA1		7,035	IS45S16400F-7CTNA2	663
IS45S16400F-6CTNA1-TR			IS45S16400F-7CTNA2-TR	1,500
IS45S16400F-6TLA1	6	6,466	IS45S16400F-7TLA1	6,359
IS45S16400F-6TLA1-TR		6,830	IS45S16400F-7TLA1-TR	6,965
IS45S16400F-7BLA1		6,013	IS45S16400F-7TLA2	6,563
IS45S16400F-7BLA1-TR		6,204	IS45S16400F-7TLA2-TR	6,665

IC 編號

庫存數量

可用數量

IC 編號

庫存數量

可用數量

1,500

6,596