IS45S16160J-7TLA2-TR

容量 256M
規格 16Mx16
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 Prod
評注
腳位數 TSOP2(54), BGA(54)
温度等级 A2 = Automotive Grade (-40°C to +105°C)
焊料類型 L = 100% matte Sn
Generation J = J
字數 160 = 16M
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
腳位/封裝 T = TSOP
產品系列 45 = SDR Automotive grade
外包裝 Tape on Reel

IS45S16160J-7TLA2-TR 特徵

  • Clock frequency: 166, 143, 133 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S16160J-7TLA2 6,462 IS45S16160J-7BLA1-TR 7,500
IS45S16160J-6BLA1 6,206 IS45S16160J-7BLA2 148
IS45S16160J-6BLA1-TR 7,500 IS45S16160J-7BLA2-TR 5,000
IS45S16160J-6CTLA2 IS45S16160J-7CTLA1 6,831
IS45S16160J-6CTLA2-TR IS45S16160J-7CTLA1-TR 6,643
IS45S16160J-6TLA1 1,620 IS45S16160J-7CTLA2 6,537
IS45S16160J-6TLA1-TR 6,607 IS45S16160J-7CTLA2-TR 6,601
IS45S16160J-6TLA2 IS45S16160J-7TLA1 6,769
IS45S16160J-6TLA2-TR IS45S16160J-7TLA1-TR 9,000
IS45S16160J-7BLA1 6,708