IS45S16160G-7TLA2-TR

容量	256M
規格	16Mx16
電壓	3.3V
類型	SDR
刷新	8K
速度	7 = 143MHz
狀態	NR
評注
腳位數	TSOP2(54), BGA(54)
產品系列	45 = SDR Automotive grade
温度等级	A2 = Automotive Grade (-40°C to +105°C)
焊料類型	L = 100% matte Sn
字數	160 = 16M
Generation	G = G
工作電壓範圍	S = 3.3V SDR
總線寬度	16 = x16
腳位/封裝	T = TSOP
外包裝	Tape on Reel

數據表

索取報價

IS45S16160G-7TLA2-TR 特徵

Clock frequency: 200,166, 143 MHz
Fully synchronous; all signals referenced to a positive clock edge
Internal bank for hiding row access/precharge
Single Power supply: 3.3V + 0.3V
LVTTL interface
Programmable burst length
- (1, 2, 4, 8, full page)
Programmable burst sequence: Sequential/Interleave
Auto Refresh (CBR)
Self Refresh
8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
Random column address every clock cycle
Programmable CAS latency (2, 3 clocks)
Burst read/write and burst read/single write operations capability
Burst termination by burst stop and precharge command OPTIONS
Package: 54-pin TSOP-II 54-ball BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

IC 編號	可用數量	IC 編號	可用數量
IS45S16160G-7TLA2	1,080	IS45S16160G-7BLA1-TR	7,500
IS45S16160G-6BLA1		IS45S16160G-7BLA2	6,647
IS45S16160G-6BLA1-TR		IS45S16160G-7BLA2-TR	7,500
IS45S16160G-6BLA2		IS45S16160G-7CTLA1	6,220
IS45S16160G-6BLA2-TR		IS45S16160G-7CTLA1-TR	6,737
IS45S16160G-6CTLA2		IS45S16160G-7CTLA2	6,290
IS45S16160G-6CTLA2-TR		IS45S16160G-7CTLA2-TR	6,711
IS45S16160G-6TLA1	6,771	IS45S16160G-7TLA1	1,000
IS45S16160G-6TLA1-TR	6,515	IS45S16160G-7TLA1-TR	5,000
IS45S16160G-7BLA1	2,784

IC 編號

庫存數量

可用數量

IC 編號

庫存數量

可用數量

1,080

7,500