| 容量 | 256M |
|---|---|
| 規格 | 16Mx16 |
| 電壓 | 3.3V |
| 類型 | SDR |
| 刷新 | 8K |
| 速度 | 7 = 143MHz |
| 狀態 | NR |
| 評注 | |
| 腳位數 | TSOP2(54), BGA(54) |
| 產品系列 | 45 = SDR Automotive grade |
| 温度等级 | A1 = Automotive Grade (-40°C to +85°C) |
| 焊料類型 | L = SnAgCu |
| 字數 | 160 = 16M |
| Generation | G = G |
| 工作電壓範圍 | S = 3.3V SDR |
| 總線寬度 | 16 = x16 |
| 腳位/封裝 | B = BGA |
ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.
| IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
|---|---|---|---|---|---|
| IS45S16160G-7BLA1-TR | 7,500 | IS45S16160G-7BLA2-TR | 7,500 | ||
| IS45S16160G-6BLA1 | IS45S16160G-7CTLA1 | 6,220 | |||
| IS45S16160G-6BLA1-TR | IS45S16160G-7CTLA1-TR | 6,737 | |||
| IS45S16160G-6BLA2 | IS45S16160G-7CTLA2 | 6,290 | |||
| IS45S16160G-6BLA2-TR | IS45S16160G-7CTLA2-TR | 6,711 | |||
| IS45S16160G-6CTLA2 | IS45S16160G-7TLA1 | 1,000 | |||
| IS45S16160G-6CTLA2-TR | IS45S16160G-7TLA1-TR | 5,000 | |||
| IS45S16160G-6TLA1 | 6,771 | IS45S16160G-7TLA2 | 1,080 | ||
| IS45S16160G-6TLA1-TR | 6,515 | IS45S16160G-7TLA2-TR | 6,879 | ||
| IS45S16160G-7BLA2 | 6,647 |