IS45S16160G-6BLA2

容量 256M
規格 16Mx16
電壓 3.3V
類型 SDR
刷新 8K
速度 6 = 166MHz
狀態 NR
評注
腳位數 TSOP2(54), BGA(54)
温度等级 A2 = Automotive Grade (-40°C to +105°C)
焊料類型 L = SnAgCu
Generation G = G
字數 160 = 16M
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
腳位/封裝 B = BGA
產品系列 45 = SDR Automotive grade

IS45S16160G-6BLA2 特徵

  • Clock frequency: 200,166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS45S16160G-6BLA2-TR IS45S16160G-7BLA2-TR 7,500
IS45S16160G-6BLA1 IS45S16160G-7CTLA1 6,220
IS45S16160G-6BLA1-TR IS45S16160G-7CTLA1-TR 6,737
IS45S16160G-6CTLA2 IS45S16160G-7CTLA2 6,290
IS45S16160G-6CTLA2-TR IS45S16160G-7CTLA2-TR 6,711
IS45S16160G-6TLA1 6,771 IS45S16160G-7TLA1 1,000
IS45S16160G-6TLA1-TR 6,515 IS45S16160G-7TLA1-TR 5,000
IS45S16160G-7BLA1 2,784 IS45S16160G-7TLA2 1,080
IS45S16160G-7BLA1-TR 7,500 IS45S16160G-7TLA2-TR 6,879
IS45S16160G-7BLA2 6,647