| 容量 | 256M |
|---|---|
| 規格 | 16Mx16 |
| 電壓 | 3.3V |
| 類型 | SDR |
| 刷新 | 8K |
| 速度 | 7 = 143MHz |
| 狀態 | Contact ISSI |
| 評注 | |
| 腳位數 | TSOP2(54), BGA(54) |
| 產品系列 | 45 = SDR Automotive grade |
| 温度等级 | A2 = Automotive Grade (-40°C to +105°C) |
| 焊料類型 | L = 100% matte Sn |
| 字數 | 160 = 16M |
| CL（CAS延遲） | C = 4 |
| Generation | D = D |
| 工作電壓範圍 | S = 3.3V SDR |
| 總線寬度 | 16 = x16 |
| 腳位/封裝 | T = TSOP |
ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.
| IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
|---|---|---|---|---|---|
| IS45S16160D-7CTLA2-TR | IS45S16160D-7BLA2-TR | 6,750 | |||
| IS45S16160D-6BLA1 | 6,409 | IS45S16160D-7CTLA1 | |||
| IS45S16160D-6BLA1-TR | 6,840 | IS45S16160D-7CTLA1-TR | |||
| IS45S16160D-6TLA1 | 3,230 | IS45S16160D-7CTNA1 | 937 | ||
| IS45S16160D-6TLA1-TR | 1,500 | IS45S16160D-7CTNA1-TR | 1,500 | ||
| IS45S16160D-75EBLA1 | 1,704 | IS45S16160D-7CTNA2 | 978 | ||
| IS45S16160D-75EBLA1-TR | IS45S16160D-7CTNA2-TR | 1,500 | |||
| IS45S16160D-75ETLA1 | 40,277 | 30,975 | IS45S16160D-7TLA1 | 1,914 | 8,499 |
| IS45S16160D-75ETLA1-TR | 49,500 | 19,500 | IS45S16160D-7TLA1-TR | 6,880 | |
| IS45S16160D-7BLA1 | 3,218 | 3,582 | IS45S16160D-7TLA2 | 3,077 | |
| IS45S16160D-7BLA1-TR | 6,421 | IS45S16160D-7TLA2-TR | 5,000 | ||
| IS45S16160D-7BLA2 | 6,103 |