1. 矽成
  2. 動態記憶體
  3. 同步動態隨機存取記憶體
  4. 3.3V
  5. 512M 64Mx8
  6. TSOP2(54)
  7. IS42S86400D-7TLI

  IS42S86400D-7TLI

數據表
索取報價
容量 512M
規格 64Mx8
電壓 3.3V
類型 SDR
刷新 8K
速度 7 = 143MHz
狀態 NR
評注
腳位數 TSOP2(54)
產品系列 42 = SDR Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
字數 6400 = 64M
Generation D = D
工作電壓範圍 S = 3.3V SDR
總線寬度 8 = x8
腳位/封裝 T = TSOP
數據表
索取報價

IS42S86400D-7TLI 特徵

  • Clock frequency: 200, 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 64 ms
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Packages: x8/x16: 54-pin TSOP-II, 54-ball TF-BGA (x16 only) x32: 90-ball TF-BGA
 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S86400D-7TLI-TR 3,000 IS42S86400D-6TLI 50,000
IS42S86400D-5TL IS42S86400D-6TLI-TR 6,661
IS42S86400D-5TL-TR IS42S86400D-7TL 5,000
IS42S86400D-6TL 51 5,000 IS42S86400D-7TL-TR 1,500
IS42S86400D-6TL-TR 6,533