IS42S83200D-75ETLI

容量 256M
規格 32Mx8
電壓 3.3V
類型 SDR
刷新 8K
速度 75E = 133MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54), BGA(54)
產品系列 42 = SDR Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
字數 3200 = 32M
Generation D = D
工作電壓範圍 S = 3.3V SDR
總線寬度 8 = x8
腳位/封裝 T = TSOP

IS42S83200D-75ETLI 特徵

  • Clock frequency: 166, 143 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Single Power supply: 3.3V + 0.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16 ms (A2 grade) or 64 ms (commercial, industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command OPTIONS
  • Package: 54-pin TSOP-II 54-ball BGA

概觀

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S83200D-75ETLI-TR 5,000 IS42S83200D-75ETL-TR
IS42S83200D IS42S83200D-7BL
IS42S83200D-6TL 249 215 IS42S83200D-7BL-TR
IS42S83200D-6TL-TR 6,804 IS42S83200D-7BLI 116 10,000
IS42S83200D-6TLI 4,173 4,173 IS42S83200D-7BLI-TR
IS42S83200D-6TLI-TR 5,000 IS42S83200D-7TL 2,332 78
IS42S83200D-75EBL IS42S83200D-7TL-TR 5,000
IS42S83200D-75EBL-TR IS42S83200D-7TLI 6,733
IS42S83200D-75ETL IS42S83200D-7TLI-TR 6,623