1. 矽成
  2. 動態記憶體
  3. 同步動態隨機存取記憶體
  4. 3.3V
  5. TSOP
  6. IS42S81600J-6TL

  IS42S81600J-6TL

數據表
索取報價
規格 8Mx16
腳位/封裝 TSOP
電壓 3.3V
刷新 4K
速度 6 = 166MHz
字數 16M
焊接 100% matte Sn
狀態 S=NOW
類型 SDR
總線寬度 8 = x8
温規 Commercial Grade (0C to +70°C)
代/版本 J
產品系列 42 = SDR Commercial/Industrial grade
温度等级 blank = Commercial Grade (0°C to +70°C)
焊料類型 L = 100% matte Sn
字數 1600 = 16M
Generation J = J
工作電壓範圍 S = 3.3V SDR
腳位/封裝 T = TSOP
數據表
索取報價

IS42S81600J-6TL 特徵

  • Clock frequency: 166, 143 MHz
  • Internal bank for hiding row access/precharge
  • Power supply IS42/45S81600J IS42/45S16800J Vdd Vddq 3.3V 3.3V 3.3V 3.3V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.