容量 | 256M |
---|---|
規格 | 8Mx32 |
電壓 | 3.3V |
類型 | SDR |
刷新 | 4K |
速度 | 75E = 133MHz |
狀態 | Prod |
評注 | |
腳位數 | TSOP2(86), BGA(90) |
產品系列 | 42 = SDR Commercial/Industrial grade |
温度等级 | I = Industrial Grade (-40°C to +85°C) |
焊料類型 | L = 100% matte Sn |
字數 | 800 = 8M |
Generation | J = J |
工作電壓範圍 | S = 3.3V SDR |
總線寬度 | 32 = x32 |
腳位/封裝 | T = TSOP |
外包裝 | Tape on Reel |
ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized in 2Meg x 32 bit x 4 Banks.
IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
---|---|---|---|---|---|
IS42S32800J-75ETLI | 50,000 | IS42S32800J-75EBLI | 240 | ||
IS42S32800J | IS42S32800J-75EBLI-TR | 7,500 | |||
IS42S32800J-6BI | IS42S32800J-7BI | ||||
IS42S32800J-6BI-TR | IS42S32800J-7BI-TR | ||||
IS42S32800J-6BL | 5,000 | IS42S32800J-7BL | 5,000 | ||
IS42S32800J-6BL-TR | 7,500 | IS42S32800J-7BL-TR | 2,500 | ||
IS42S32800J-6BLI | 1,440 | IS42S32800J-7BLI | 3,946 | ||
IS42S32800J-6BLI-TR | 2,500 | IS42S32800J-7BLI-TR | 100,000 | ||
IS42S32800J-6TL | 1,080 | IS42S32800J-7TL | 1,080 | ||
IS42S32800J-6TL-TR | 6,614 | IS42S32800J-7TL-TR | 7,500 | ||
IS42S32800J-6TLI | 1,080 | IS42S32800J-7TLI | 1,000 | ||
IS42S32800J-6TLI-TR | 6,929 | IS42S32800J-7TLI-TR | 1,500 |