1. 矽成
  2. 動態記憶體
  3. 同步動態隨機存取記憶體
  4. Preceding 3.3V
  5. 512M 32Mx16
  6. TSOP2(54), BGA(54)
  7. IS42S16320B-75ETLI

  IS42S16320B-75ETLI

數據表
索取報價
容量 512M
規格 32Mx16
電壓 3.3V
類型 SDR
刷新 8K
速度 75E = 133MHz
狀態 Contact ISSI
評注
腳位數 TSOP2(54), BGA(54)
產品系列 42 = SDR Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
字數 320 = 32M
Generation B = B
工作電壓範圍 S = 3.3V SDR
總線寬度 16 = x16
腳位/封裝 T = TSOP
數據表
索取報價

IS42S16320B-75ETLI 特徵

  • Clock frequency: 166, 143, 133 MHz
  • -6 6 10 166 100 5.4 6 -7 7 10 143 100 5.4 6 -75E Unit
    • 7.5
    • 133
    • 5.5 ns ns Mhz Mhz ns ns
  • Internal bank for hiding row access/precharge
  • Power supply IS42/45S16320B IS42S86400B
  • LVTTL interface
  • Programmable burst length Vdd Vddq 3.3V 3.3V 3.3V 3.3V
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 8K refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command
  • Available in 54-pin TSOP-II and 54-ball W-BGA (x16 only)

概觀

ISSI's 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42S16320B-75ETLI-TR 6,388 IS42S16320B-75ETL 420 44
IS42S16320B IS42S16320B-75ETL-TR 5,000
IS42S16320B-6BL 6,819 IS42S16320B-7BL 43 6,348
IS42S16320B-6BL-TR 6,893 IS42S16320B-7BL-TR 5,000
IS42S16320B-6BLI 6,679 IS42S16320B-7BLI 55 6,404
IS42S16320B-6BLI-TR 6,252 IS42S16320B-7BLI-TR 6,729
IS42S16320B-6TL 34 IS42S16320B-7TL 2,770
IS42S16320B-6TL-TR 6,650 IS42S16320B-7TL-TR 6,940
IS42S16320B-6TLI 35 32 IS42S16320B-7TLI 50 843
IS42S16320B-6TLI-TR 6,876 IS42S16320B-7TLI-TR 6,312