1. 矽成
  2. 靜態隨機存取存儲器
  3. QUAD/QUADP and DDR-II/DDR-IIP
  4. QUAD
  5. 72M 4Mx18
  6. 165 ball BGA (13 x 15 mm)
  7. IS61QDB24M18A-333B4L

  IS61QDB24M18A-333B4L

數據表
索取報價
容量 72M
規格 4Mx18
陣 2
狀態 Prod
速度Mhz 250, 300, 333
評論上一版本 IS61QDB24M18, Application Note
產品系列 61 = QUAD/P DDR-2/P
配置 4M18 = 4M x18
包裝代碼 B4 = 165 ball BGA (13 x 15 mm)
ROHS版 L = Lead-free
突發類型 B2 = Burst 2
硅片版本 A = A
讀延時（RL） blank = 1.5 clock cycles or 2.5 clock cycles
ODT選項 blank = No ODT
產品類別 QD = QUAD
溫度範圍 blank = Commercial (0°C to 70°C)
速度 333 = 333MHz
數據表
索取報價

IS61QDB24M18A-333B4L 特徵

  • 2Mx36 and 4Mx18 configuration available.
  • On-chip Delay-Locked loop (DLL) for wide data valid window.
  • Separate independent read and write ports with concurrent read and write operations.
  • Synchronous pipeline read with EARLY write operation.
  • Double Data Rate (DDR) interface for read and write input ports.
  • Fixed 2-bit burst for read and write operations.
  • Clock stop support.
  • Two input clocks (K and K#) for address and control registering at rising edges only. Two output clocks (C and C#) for data output control. Two echo clocks (CQ and CQ#) that are delivered simultaneously with data. +1.8V core power supply and 1.5, 1.8V VDDQ, used with 0.75, 0.9V VREF.
  • HSTL input and output interface.
  • Registered addresses, write and read controls, byte writes, data in, and data outputs.
  • Full data coherency.
  • Boundary scan using limited set of JTAG 1149.1 functions.
  • Byte write capability.
  • Fine ball grid array (FBGA) package: 13mmx15mm and 15mmx17mm body size 165-ball (11 x 15) array
  • Read address
  • Read enable
  • Write enable
  • Byte writes
  • Data-in for early writes The following are registered on the rising edge of the K# clock:
  • Write address
  • Byte writes

概觀

The synchronous, high-performance CMOS static random access memory (SRAM) devices. These SRAMs have separate I/Os, eliminating the need for high-speed bus turnaround. The rising edge of K clock initiates the read/write operation, and all internal operations are self-timed. Refer to the.

 

相關IC编號

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IS61QDB24M18A-333B4L-TR IS61QDB24M18A-300B4LI 144
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IS61QDB24M18A-250B4L IS61QDB24M18A-300M3L 10,000
IS61QDB24M18A-250B4L-TR IS61QDB24M18A-300M3L-TR
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IS61QDB24M18A-250B4LI-TR IS61QDB24M18A-300M3LI-TR
IS61QDB24M18A-250M3 IS61QDB24M18A-333B4
IS61QDB24M18A-250M3-TR IS61QDB24M18A-333B4-TR
IS61QDB24M18A-250M3I IS61QDB24M18A-333B4I
IS61QDB24M18A-250M3I-TR IS61QDB24M18A-333B4I-TR
IS61QDB24M18A-250M3L 10,000 IS61QDB24M18A-333B4LI
IS61QDB24M18A-250M3L-TR IS61QDB24M18A-333B4LI-TR
IS61QDB24M18A-250M3LI 10,000 IS61QDB24M18A-333M3
IS61QDB24M18A-250M3LI-TR IS61QDB24M18A-333M3-TR
IS61QDB24M18A-300B4 IS61QDB24M18A-333M3I
IS61QDB24M18A-300B4-TR IS61QDB24M18A-333M3I-TR
IS61QDB24M18A-300B4I IS61QDB24M18A-333M3L 10,000
IS61QDB24M18A-300B4I-TR IS61QDB24M18A-333M3L-TR
IS61QDB24M18A-300B4L IS61QDB24M18A-333M3LI 10,000
IS61QDB24M18A-300B4L-TR IS61QDB24M18A-333M3LI-TR