1. 矽成
  2. Mobile DRAM
  3. Mobile DDR1 SDRAM
  4. Preceding
  5. 1.8V
  6. BGA(90)
  7. IS43LR32800F-6BLI

  IS43LR32800F-6BLI

數據表
索取報價
規格 8Mx32
腳位/封裝 BGA(90)
電壓 1.8V
刷新 4K
字數 8M
型號別 IBIS, IBIS(46)
焊接 SnAgCu
狀態 EOL
類型 MDDR
總線寬度 32 = x32
速度（MHz） up to 166Mhz
温規 Industrial Grade (-40C to +85°C)
代/版本 F
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
字數 800 = 8M
Generation F = F
速度 6 = 166MHz
工作電壓範圍 LR = 1.8V mobile DDR (LPDDR)
腳位/封裝 B = BGA
數據表
索取報價

IS43LR32800F-6BLI 特徵

  • JEDEC standard 1.8V power supply.
  • 64ms refresh period (4K cycle)
  • VDD = 1.8V, VDDQ = 1.8V
  • Auto & self refresh
  • Four internal banks for concurrent operation
  • Concurrent Auto Precharge
  • MRS cycle with address key programs
  • Maximum clock frequency up to 200MHZ
  • Maximum data rate up to 400Mbps/pin
  • Power Saving support - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature Compensated Self Refresh) - Deep Power Down Mode - Programmable Driver Strength Control by Full Strength, or 3/4, 1/2, 1/4, 1/8 of Full Strength
  • - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave)
  • Fully differential clock inputs (CK, /CK)
  • All inputs except data & DM are sampled at the rising edge of the system clock
  • Data I/O transaction on both edges of data strobe
  • Bidirectional data strobe per byte of data (DQS)
  • Status Register Read (SRR)
  • DM for write masking only
  • LVCMOS compatible inputs/outputs
  • Edge aligned data & data strobe output
  • Packages: