IS43LQ32640EA-075BLI-TR

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容量 2G
規格 Two Channel (2x16)
電壓 1.1V/1.8V
類型 LPDDR4
速度 075 = 1333Mhz
狀態 S=Q4/20
腳位數 BGA(200)
產品系列 43 = DDR/DDR2/DDR3/DDR4 Commercial/Industrial grade
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
字數 640 = 64M
Generation EA = EA
工作電壓範圍 LQ = 1.1V LPDDR4
總線寬度 32 = x32
腳位/封裝 B = BGA
外包裝 Tape on Reel

IS43LQ32640EA-075BLI-TR 特徵

  • Configuration: - 64Mb x16 x 2 channels
  • - 8 internal banks per channel
  • On-Chip ECC:
  • - Single-bit error correction (per 64-bits)
  • Low-voltage Core and I/O Power Supplies VDD1 = 1.70-1.95V VDD2 = 1.06-1.17V VDDQ = 1.06-1.17V (LPDDR4) VDDQ = 0.57-0.65V (LPDDR4X) LVSTL(Low Voltage Swing Terminated Logic) I/O Interface Internal VREF and VREF Training
  • Dynamic ODT : DQ ODT :VSSQ Termination CA ODT :VSS Termination
  • Max. Clock Frequency : 1.6GHz (3.2Gbps)
  • 16n Pre-fetch DDR architecture
  • Single data rate (multiple cycles) command/ address bus
  • Bidirectional/differential data strobe per byte of data (DQS/DQS#)
  • Programmable burst lengths (16 or 32)
  • ZQ Calibration
  • Operation Temperature Industrial (TC = -40°C to 95°C) Automotive, A1 (TC = -40°C to 95°C) Automotive, A2 (TC = -40°C to 105°C) Automotive, A3 (TC = -40°C to 125°C)
  • On-chip temperature sensor whose status can be read from MR4

概觀

The IS43/46LQ32640EA and IS43/46LQ32640EAL are 2Gbit CMOS LPDDR4 SDRAM. The device is orga- nized as 2 channels per device, and individual channel is 8-banks and 16-bits. This product uses a double-da- ta-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 16N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 16n bits prefetched to achieve very high bandwidth.

 

相關IC编號

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IS43LQ32640EA-075BLI IS43LQ32640EA-062BLI
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IS43LQ32640EA-062B2LI-TR