IS42VM32100D-6BLI-TR

容量 32M
規格 1Mx32
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 4K
狀態 Prod
評注
腳位數 BGA(90)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation D = D
字數 100 = 1M
速度 6 = 166MHz
工作電壓範圍 VM = 1.8V mobile SDR
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42VM32100D-6BLI-TR 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal dual banks operation.
  • Burst Read Single Write operation.
  • Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh)
  • Programmable Driver Strength Control - Full Strength or 1/2, 1/4, of Full Strength
  • Deep Power Down Mode.

概觀

These IS42SM/RM/VM32100D are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32.

 

相關IC编號

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IS42RM32100D-6BLI 5,000 IS42SM32100D-75BLI
IS42RM32100D-6BLI-TR IS42SM32100D-75BLI-TR
IS42RM32100D-75BLI 5,000 IS42VM32100D-75BLI
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IS42SM32100D-6BLI 2