IS42SM32800E-75BLI

容量 256M
規格 8Mx32
電壓 1.8/2.5/3.3V
類型 MSDR
刷新 4K
狀態 EOL
評注
腳位數 BGA(90)
速度Mhz 166, 133
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = SnAgCu
Generation E = E
字數 800 = 8M
速度 75 = 133Mhz
工作電壓範圍 SM = 3.3V
總線寬度 32 = x32
腳位/封裝 B = BGA
產品系列 42 = SDR Commercial/Industrial grade

IS42SM32800E-75BLI 特徵

  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type. - 1, 2, 4, 8 or Full Page for Sequential Burst. - 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2, 3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.
  • Internal 4 banks operation.
  • Burst Read Single Write operation.
  • Special Function Support. - PASR(Partial Array Self Refresh) - Auto TCSR(Temperature Compensated Self Refresh) - Programmable Driver Strength Control
  • Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - Deep Power Down Mode

概觀

These IS42/45SM/RM/VM32800E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 32.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42SM32800E-75BLI-TR 6,446 IS42SM32800E-6BLI-TR 6,520
IS42RM32800E-6BLI 6,065 IS42VM32800E-6BLI 6,547
IS42RM32800E-6BLI-TR 7,500 IS42VM32800E-6BLI-TR 6,418
IS42RM32800E-75BLI 6,048 IS42VM32800E-75BLI 6,705
IS42RM32800E-75BLI-TR 7,500 IS42VM32800E-75BLI-TR 6,687
IS42SM32800E-6BLI 6,279