IS42R16800E-8TLI-TR

容量 128M
規格 8Mx16
電壓 2.5V
類型 SDR
刷新 4K
狀態 EOL
評注
腳位數 TSOP2(54), BGA(54)
速度Mhz 133
温度等级 I = Industrial Grade (-40°C to +85°C)
焊料類型 L = 100% matte Sn
Generation E = E
字數 800 = 8M
工作電壓範圍 R = 2.5V DDR or 2.5V SDR
總線寬度 16 = x16
腳位/封裝 T = TSOP
產品系列 42 = SDR Commercial/Industrial grade
外包裝 Tape on Reel

IS42R16800E-8TLI-TR 特徵

  • Clock frequency: 133, 125 MHz
  • Fully synchronous; all signals referenced to a positive clock edge
  • Internal bank for hiding row access/precharge
  • Power supply: 2.5V
  • LVTTL interface
  • Programmable burst length
    • (1, 2, 4, 8, full page)
  • Programmable burst sequence: Sequential/Interleave
  • Auto Refresh (CBR)
  • Self Refresh
  • 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (A1 grade)
  • Random column address every clock cycle
  • Programmable CAS latency (2, 3 clocks)
  • Burst read/write and burst read/single write operations capability
  • Burst termination by burst stop and precharge command

概觀

ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS42R16800E-8TLI IS42R16800E-8TL
IS42R16800E-75BL IS42R16800E-8TL-TR
IS42R16800E-75BL-TR IS45R16800E-75BLA1
IS42R16800E-75BLI IS45R16800E-75BLA1-TR
IS42R16800E-75BLI-TR IS45R16800E-75BLA2 301
IS42R16800E-75TL IS45R16800E-75BLA2-TR
IS42R16800E-75TL-TR IS45R16800E-75TLA1
IS42R16800E-75TLI IS45R16800E-75TLA1-TR
IS42R16800E-75TLI-TR IS45R16800E-8BLA1
IS42R16800E-8BL IS45R16800E-8BLA1-TR
IS42R16800E-8BL-TR IS45R16800E-8BLA2
IS42R16800E-8BLI IS45R16800E-8BLA2-TR
IS42R16800E-8BLI-TR