Buy | |
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容量 | 64M |
規格 | 8Mx8 |
電壓 | 1.7-1.95V |
狀態 | Prod |
腳位數 | BGA(24) |
速度Mhz | 166 |
評論上一篇 | ECC Based |
速度 | 133 = 133 MHz |
Item | 66 = Pseudo SRAM/HyperRAM™ |
電壓 - 電源 | ALL = 1.8V |
密度配置 | 8M8 = 64Mb /8M x8 |
包裝代碼 | B1 = 24-ball TFBGA |
ROHS版 | L = true |
Revision | D = D |
產品類別 | WVH = HyperRAM |
溫度範圍 | I = Industrial (-40°C to 85°C) |
外包裝 | Tape on Reel |
The IS66/67WVH8M8EDALL/BLL are integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 8M words by 8 bits. The device supports a HyperBus interface, Very Low Signal Count (Address, Command and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications.
IC 編號 | 庫存數量 | 可用數量 | IC 編號 | 庫存數量 | 可用數量 |
---|---|---|---|---|---|
IS66WVH8M8EDALL-133B1LI | IS66WVH8M8EDALL-166B1LI-TR | ||||
IS66WVH8M8EDALL-133B2LI | IS66WVH8M8EDBLL | ||||
IS66WVH8M8EDALL-133B2LI-TR | IS66WVH8M8EDBLL-TR | ||||
IS66WVH8M8EDALL-166B1LI |