1. 矽成
  2. 閃存
  3. 閃存
  4. Parallel (ISA) NOR
  5. 2.7-3.6V
  6. 32M
  7. 64-Ball BGA 9x9mm
  8. IS29GL032-70FLA3T

  IS29GL032-70FLA3T

數據表
索取報價
容量 32M
電壓 2.7-3.6V
類型 x8/x16
備註 Top Boot (U) or Bottom Boot (D) High Protection (T) or Low Protection (B)
狀態 S=Q2/19
溫度範圍 -40 to 125°C
訪問時間 60/70ns
腳位類型 TSOP, BGA
產品系列 29GL = 29GL
腳位/封裝 F = 64-Ball BGA 9x9mm
Temperature Grade blank = Refer to datasheet
無鉛封裝 L = true
容量 032 = 32M
速度 70 = 70NS
引導扇區 blank = Industry Standard Parallel CFI
數據表
索取報價

IS29GL032-70FLA3T 特徵

  • Supply operation
  • - VCC = 2.7~3.6V - VCCQ = 1.65~3.6V (I/O buffers) - VPPH = 9.5~10.5V (Vpp/WP#))
  • Asynchronous random or page read
  • - Page size: 8 words or 16 bytes - Page access: 25ns - Random access (VCCQ = 2.7~3.6V):60ns (BGA); 70ns (TSOP)
  • Buffer program: 256-word MAX program buffer
  • Program time
  • - 0.56us per byte (1.8MB/s TYP when using 256-word buffer size in buffer program without VPPH) - 0.31us per byte (3.2MB/s TYP when using 256- word buffer size in buffer program with VPPH)
  • Memory Organization
  • - 16Mb: 32x 64KB (Uniform), or 8x 8KB (Top or Bottom Boot)+31x64KB - 32Mb: 64x 64KB (Uniform), or 8x 8KB (Top or Bottom Boot)+63x64KB - 64Mb: 128x 64KB (Uniform), or 8x 8KB (Top or Bottom Boot)+127x64KB
  • Program/erase suspend and resume capability
  • - Program suspend: Read from another block - Erase suspend: Read or Program from another block
  • BLANK CHECK operation to verify an erased block
  • Unlock bypass, block erase, chip erase, and write to buffer capability
  • - Fast buffered/batch programming - Fast block and chip erase
  • VPP/WP# pin protection
  • - VPPH voltage on VPP to accelerate program- ing performance - Protects highest/lowest block (H/L uniform) or top/bottom two blocks (T/B boot)
  • Software Protection
  • - Volatile protection - Nonvolatile protection - Password protection - Password access
  • Support CFI (Common Flash Interface)
  • Extended Memory block
  • - 128-word (256-byte) block for permanent secure identification - Program or lock implemented at the factory or by customer
  • Low Power consumption: Standby mode
  • Data retention: 20 years (TYP)
  • 100K minimum ERASE cycles per block
  • Package Options
  • - 48-pin TSOP - 56-pin TSOP - 64-ball 11mm x 13mm BGA - 48-ball 6mm x 8mm BGA

概觀

The IS29GL064/032/016 offer fast page access time of 25ns with a corresponding random access time as fast as 60ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

 

相關IC编號

IC 編號 庫存數量 可用數量 IC 編號 庫存數量 可用數量
IS29GL032-70FLA3T-TR IS29GL032-70FLA3B
IS29GL032-60B IS29GL032-70FLA3B-TR
IS29GL032-60B-TR IS29GL032-70FLA3D
IS29GL032-60BLEB IS29GL032-70FLA3D-TR
IS29GL032-60BLEB-TR IS29GL032-70FLA3U
IS29GL032-60BLET IS29GL032-70FLA3U-TR
IS29GL032-60BLET-TR IS29GL032-70S
IS29GL032-60BLEU IS29GL032-70S-TR
IS29GL032-60BLEU-TR IS29GL032-70SLEB 10,000
IS29GL032-60F IS29GL032-70SLEB-TR
IS29GL032-60F-TR IS29GL032-70SLET 10,000
IS29GL032-60FLEB IS29GL032-70SLET-TR
IS29GL032-60FLEB-TR IS29GL032-70SLEU
IS29GL032-60FLET IS29GL032-70SLEU-TR
IS29GL032-60FLET-TR IS29GL032-70T
IS29GL032-60FLEU IS29GL032-70T-TR
IS29GL032-60FLEU-TR IS29GL032-70TLEB 10,000
IS29GL032-70BLA3B 10,000 IS29GL032-70TLEB-TR
IS29GL032-70BLA3B-TR IS29GL032-70TLET 10,000
IS29GL032-70BLA3D IS29GL032-70TLET-TR
IS29GL032-70BLA3D-TR IS29GL032-70TLEU
IS29GL032-70BLA3T 10,000 IS29GL032-70TLEU-TR
IS29GL032-70BLA3T-TR IS29GL032-80SLA3B
IS29GL032-70BLA3U IS29GL032-80SLA3B-TR
IS29GL032-70BLA3U-TR IS29GL032-80SLA3D
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