IS41LV16100C-50KI

容量	16M
規格	1Mx16
腳位/封裝	400-mil SOJ
電壓	5V
刷新	1K
速度	50 = 50Ns
字數	1M
焊接	SnPb
狀態	Prod
類型	EDO
總線寬度	16 = x16
温規	Industrial Grade (-40C to +85°C)
代/版本	C
產品系列	41 = Asynchronous
温度等级	I = Industrial Grade (-40°C to +85°C)
焊料類型	blank = Sn/Pb
字數	100 = 1M
Generation	C = C
工作電壓範圍	LV = 3.3V
腳位/封裝	K = S0J

數據表

索取報價

IS41LV16100C-50KI 特徵

TTL compatible inputs and outputs; tristate I/O
Refresh Interval: — Auto refresh Mode: 1,024 cycles /16 ms — RAS-Only, CAS-before-RAS (CBR), and Hidden — Self refresh Mode: 1,024 cycles /128 ms
JEDEC standard pinout
Single power supply: 5V ± 10% (IS41C16100C) 3.3V ± 10% (IS41LV16100C)
Byte Write and Byte Read operation via two CAS

概觀

The ISSI IS41C16100C and IS41LV16100C are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Ac- cess Memories. These devices offer a cycle access called Extended Data Out (EDO) Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 30 ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.