| 容量 | 4M |
|---|---|
| 規格 | 256Kx16 |
| 腳位/封裝 | TSOP2(40/44) |
| 電壓 | 3.3V |
| 刷新 | 512 |
| 速度 | 35 |
| 字數 | 256M |
| 焊接 | 100% matte Sn |
| 狀態 | NR |
| 類型 | EDO |
| 總線寬度 | 16 = x16 |
| 温規 | Industrial Grade (-40C to +85°C) |
| 代/版本 | C |
| 產品系列 | 41 = Asynchronous |
| 温度等级 | I = Industrial Grade (-40°C to +85°C) |
| 焊料類型 | L = 100% matte Sn |
| 字數 | 256 = 256M |
| Generation | C = C |
| 工作電壓範圍 | C = 5V |
| 腳位/封裝 | T = TSOP |
The IS41C16256C and IS41LV16256C are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memo- ries. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 14ns per 16-bit word. It is asynchronous, as it does not require a clock signal input to synchronize commands and I/O.